AUIRFB8409, Транзистор, Autom Q101 Nкан 40В 195А 1.3мОм [TO-220AB]
The AUIRFB8409 is a 40V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
• Advanced process technology
• New ultra low on-resistance
• Repetitive avalanche allowed up to Tjmax
• Automotive qualified
• 175°C Operating temperature