AUIRGP35B60PD-E, Transistor IGBT N-Ch 600V

PartNumber: AUIRGP35B60PD-E
Ном. номер: 8077918965
Производитель: International Rectifier
AUIRGP35B60PD-E, Transistor IGBT N-Ch 600V
Доступно на заказ 1 шт. Отгрузка со склада в Москве 6 недель.
880 × = 880

Описание

Co-Pack IGBT over 21A, International Rectifier
Isolated Gate Bipolar Transistors (IGBT) from International Semiconductor provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT (Insulated-Gate Bipolar Transistor), International Rectifier
International Rectifier offers an extensive IGBT portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT die designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) die can be employed to eliminate bond wires allowing dual sided cooling for improved thermal performance, reliability and efficiency.

Полупроводники / Дискретные компоненты / IGBT транзисторы /
International Rectifier AUIRGP35B60PD-E, IGBT Transistor, 60 A 600 V, 150kHz, 3-Pin TO-247AD

Технические параметры

Channel Type
N
конфигурация
Single
Dimensions
15.87 x 5.31 x 20.7mm
Maximum Collector Emitter Voltage
600 V
Maximum Continuous Collector Current
60 A
Maximum Gate Emitter Voltage
±20V
Maximum Operating Temperature
+150 °C
Максимальная рассеиваемая мощность
308 W
Minimum Operating Temperature
-55 °C
Package Type
TO-247AD
Pin Count
3
Switching Speed
150kHz
Width
5.31mm
высота
20.7mm
длина
15.87mm
Mounting Type
Through Hole

Дополнительная информация

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