AUIRLR3114Z, Auto Q101 Nкан 40В 130А DPak
The AUIRLR3114Z is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
• Advanced process technology
• Logic level gate drive
• Repetitive avalanche allowed up to Tjmax