BC846B-7-F, Trans GP BJT NPN 65V 0.1A 350mW 3-Pin SOT-23 T/R

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4 руб.

Мин. кол-во для заказа 12000 шт.

Кратность заказа 3000 шт.

от 15000 шт. — 3.50 руб.

Добавить в корзину 12000 шт. на сумму 48 000 руб.

Номенклатурный номер: 8003190900

Артикул: BC846B-7-F

Бренд: DIODES INC.

Semiconductor - Discrete > Transistors > BJT - General Purpose

Collector-Emitter Breakdown Voltage	65V
Maximum DC Collector Current	100mA
Pd - Power Dissipation	300mW
Transistor Type	NPN
Maximum Collector Base Voltage	80 V
Maximum Collector Emitter Voltage	65 V
Maximum Emitter Base Voltage	6 V
Maximum Operating Frequency	300 MHz
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	300 mW
Minimum DC Current Gain	200
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	80 V
Collector- Emitter Voltage VCEO Max:	65 V
Collector-Emitter Saturation Voltage:	200 mV
Configuration:	Single
DC Collector/Base Gain hfe Min:	200
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	300 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	100 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Pd - Power Dissipation:	310 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	BC846
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	1