BC847B-7-F, Биполярный транзистор, NPN, 45 В, 0.1 А
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Описание
Транзисторы / Биполярные транзисторы / Одиночные биполярные транзисторы
Биполярный транзистор, NPN, 45 В, 0.1 А
Технические параметры
| Корпус | SOT23-3 | |
| Base Product Number | BC847 -> | |
| Current - Collector (Ic) (Max) | 100mA | |
| Current - Collector Cutoff (Max) | 15nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V | |
| ECCN | EAR99 | |
| Frequency - Transition | 300MHz | |
| HTSUS | 8541.21.0075 | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -65В°C ~ 150В°C (TJ) | |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Power - Max | 300mW | |
| REACH Status | REACH Unaffected | |
| RoHS Status | ROHS3 Compliant | |
| Supplier Device Package | SOT-23-3 | |
| Transistor Type | NPN | |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 45V | |
| Collector-Emitter Breakdown Voltage | 45V | |
| Maximum DC Collector Current | 100mA | |
| Pd - Power Dissipation | 300mW | |
| Brand: | Diodes Incorporated | |
| Collector- Base Voltage VCBO: | 50 V | |
| Collector- Emitter Voltage VCEO Max: | 45 V | |
| Collector-Emitter Saturation Voltage: | 200 mV | |
| Configuration: | Single | |
| DC Collector/Base Gain hfe Min: | 200 | |
| Emitter- Base Voltage VEBO: | 6 V | |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 | |
| Gain Bandwidth Product fT: | 300 MHz | |
| Manufacturer: | Diodes Incorporated | |
| Maximum DC Collector Current: | 100 mA | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -65 C | |
| Mounting Style: | SMD/SMT | |
| Package / Case: | SOT-23-3 | |
| Pd - Power Dissipation: | 310 mW | |
| Product Category: | Bipolar Transistors-BJT | |
| Product Type: | BJTs-Bipolar Transistors | |
| Series: | BC847B | |
| Subcategory: | Transistors | |
| Technology: | Si | |
| Transistor Polarity: | NPN | |
| Maximum Collector Base Voltage | 50 V | |
| Maximum Collector Emitter Voltage | 45 V | |
| Maximum Emitter Base Voltage | 6 V | |
| Maximum Operating Frequency | 300 MHz | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Power Dissipation | 300 mW | |
| Minimum DC Current Gain | 200 | |
| Number of Elements per Chip | 1 | |
| Package Type | SOT-23 | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Вес, г | 0.03 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
