BC848BWT1G

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4 руб.
Мин. кол-во для заказа 110 шт.
Добавить в корзину 110 шт. на сумму 440 руб.
Номенклатурный номер: 8024373711

Описание

Trans GP BJT NPN 30V 0.1A 200mW 3-Pin SC-70 T/R

Технические параметры

Automotive No
Configuration Single
ECCN (US) EAR99
EU RoHS Compliant
Lead Shape Gull-wing
Material Si
Maximum Base Emitter Saturation Voltage (V) 0.7(Typ)0.5mA 10mA|0.9(Typ)5mA 100mA
Maximum Collector Base Voltage (V) 30
Maximum Collector Cut-Off Current (nA) 15
Maximum Collector-Emitter Saturation Voltage (V) 0.25 0.5mA 10mA|0.6 5mA 100mA
Maximum Collector-Emitter Voltage (V) 30
Maximum DC Collector Current (A) 0.1
Maximum Emitter Base Voltage (V) 5
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 200
Maximum Transition Frequency (MHz) 100(Min)
Minimum DC Current Gain 200 2mA 5V
Minimum Operating Temperature (°C) -55
Mounting Surface Mount
Number of Elements per Chip 1
Operating Junction Temperature (°C) -55 to 150
Packaging Tape and Reel
Part Status Active
PCB changed 3
Pin Count 3
PPAP No
Product Category Bipolar Small Signal
Standard Package Name SOT-323
Supplier Package SC-70
Type NPN
Brand: onsemi
Collector- Base Voltage VCBO: 30 V
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 600 mV
Configuration: Single
Continuous Collector Current: 100 mA
DC Collector/Base Gain hfe Min: 150
Emitter- Base Voltage VEBO: 5 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 100 MHz
Manufacturer: onsemi
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SC-70-3
Pd - Power Dissipation: 200 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: BC848BW
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN

Техническая документация

Datasheet
pdf, 203 КБ
Datasheet BC848BWT1G
pdf, 204 КБ