BFP650H6327XTSA1, Биполярный - РЧ транзистор, NPN, 4.5 В, 42 ГГц, 500 мВт, 150 мА, 100 hFE
The BFP 650 H6327 is a NPN high linearity wideband Bipolar RF Transistor based on Infineon's reliable high volume silicon germanium carbon hetero-junction bipolar technology. With its high linearity at currents as low as 30mA the device supports energy efficient designs. The typical transition frequency is approximately 42GHz, hence the device offers high power gain at frequencies up to 5GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.
• Linear low-noise driver amplifier
• Easy to use
Полупроводники - Дискретные\Транзисторы\Биполярные Транзисторы