BSC014N04LSATMA1, Силовой МОП-транзистор, N Channel, 40 В, 100 А, 0.0011 Ом, TDSON, Surface Mount
см. техническую документацию
Описание
The BSC014N04LS is a N-channel Power MOSFET features not only the industry's lowest RDS (ON) but also a perfect switching behaviour for fast switching applications. 15% lower RDS (ON) and 31% lower figure of merit (RDS (ON) x Qg) compared to alternative devices has been realized by advanced thin wafer technology.
• Optimized for synchronous rectification
• Integrated Schottky-like diode
• 100% Avalanche tested
• Superior thermal resistance
• Qualified according to JEDEC for target applications
• Higher solder joint reliability due to enlarged source interconnection
• Highest system efficiency
• Less paralleling required
• Increased power density
• Very low voltage overshoot
• Halogen-free
Технические параметры
| Channel Type | N Channel |
| Drain Source On State Resistance | 0.0011Ом |
| Power Dissipation | 2.5Вт |
| Количество Выводов | 8вывод(-ов) |
| Максимальная Рабочая Температура | 150 C |
| Монтаж транзистора | Surface Mount |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 40В |
| Непрерывный Ток Стока | 100А |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 2В |
| Рассеиваемая Мощность | 2.5Вт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.0011Ом |
| Стиль Корпуса Транзистора | TDSON |
| Channel Mode | Enhancement |
| Forward Diode Voltage | 1V |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Resistance | 1.9 mΩ |
| Maximum Drain Source Voltage | 40 V |
| Maximum Gate Source Voltage | 20 V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 96 W |
| Minimum Gate Threshold Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | TDSON |
| Pin Count | 8 |
| Series | BSC014N04LS |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 61 nC @ 10 V |
| Width | 6.15mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 7 ns |
| Forward Transconductance - Min: | 120 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TDSON-8 |
| Part # Aliases: | BSC014N04LS SP000871196 |
| Pd - Power Dissipation: | 96 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 85 nC |
| Rds On - Drain-Source Resistance: | 1.1 mOhms |
| Rise Time: | 9 ns |
| Series: | OptiMOS 5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 35 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Вес, г | 0.2 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
