BSC057N08NS3 G, MOSFET N-Channel 80V 16A

PartNumber: BSC057N08NS3 G
Ном. номер: 8082043087
Производитель: Infineon Technologies
BSC057N08NS3 G, MOSFET N-Channel 80V 16A
Доступно на заказ более 20 шт. Отгрузка со склада в Москве 7 недель.
200 × = 400
Количество товаров должно быть кратно 2 шт.
от 20 шт. — 110 руб.
от 40 шт. — 87 руб.

Описание

Infineon OptiMOS™3 Power MOSFETs, 60V and over
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

MOSFET Transistors, Infineon
Infineon's large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Infineon BSC057N08NS3 G N-channel MOSFET Transistor, 100 A, 80 V, 8-pin TDSON

Технические параметры

разрешение
DC/DC Converter, High Frequency Switching, Synchronous Rectification
Channel Mode
Enhancement
Channel Type
N
конфигурация
Quad Drain, Single Gate, Triple Source
размеры
5.35 x 6.1 x 1.1mm
высота
1.1mm
длина
5.35mm
Maximum Continuous Drain Current
100 A
Maximum Drain Source Resistance
0.0057 Ω
Maximum Drain Source Voltage
80 V
Maximum Gate Source Voltage
±20 V
максимальная рабочая температура
+150 °C
Максимальная рассеиваемая мощность
114 W
Minimum Operating Temperature
-55 °C
тип монтажа
Surface Mount
Number of Elements per Chip
1
тип упаковки
TDSON
Pin Count
8
Typical Gate Charge @ Vgs
42 nC@ 0 → 10 V
Typical Input Capacitance @ Vds
2900 pF@ 40 V
Typical Turn-Off Delay Time
32 ns
Typical Turn-On Delay Time
16 ns
ширина
6.1mm
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V

Дополнительная информация

Datasheet