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BSS138LG

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см. техническую документацию

4911 шт. со склада г.Москва, срок 8-9 дней

110 руб.

Мин. кол-во для заказа 2 шт.

от 5 шт. — 51 руб.

от 10 шт. — 34 руб.

от 100 шт. — 17.90 руб.

Добавить в корзину 2 шт. на сумму 220 руб.

Номенклатурный номер: 8002986596

Бренд: Нет торговой марки

Описание

Электроэлемент

MOSFET, N CH, 50V, 200MA, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.5V; P

Технические параметры

Brand	ON Semiconductor/Fairchild
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	5.1 ns
Forward Transconductance - Min	120 mS
Height	1.2 mm
Id - Continuous Drain Current	200 mA
Length	2.9 mm
Manufacturer	ON Semiconductor
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOT-23-3
Packaging	Reel
Pd - Power Dissipation	350 mW
Product Category	MOSFET
Qg - Gate Charge	0.549 nC
Rds On - Drain-Source Resistance	3.5 Ohms
Rise Time	1.8 ns
RoHS	Details
Series	BSS138L
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	5.3 ns
Typical Turn-On Delay Time	2.2 ns
Unit Weight	0.001058 oz
Vds - Drain-Source Breakdown Voltage	50 V
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	1.25 V
Width	1.3 mm
Part # Aliases	BSS138_NL
Product	MOSFET Small Signal
Channel Type	N
Maximum Continuous Drain Current	220 mA
Maximum Drain Source Resistance	3.5 Ω
Maximum Drain Source Voltage	50 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	360 mW
Minimum Gate Threshold Voltage	0.8V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	1.7 nC @ 10 V
Automotive	No
ECCN (US)	EAR99
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	0.22
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	0.22
Maximum Diode Forward Voltage (V)	1.4
Maximum Drain Source Resistance (mOhm)	3500@10V
Maximum Drain Source Voltage (V)	50
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	1.5
Maximum IDSS (uA)	0.5
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	350
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation (mW)	360
Maximum Power Dissipation on PCB @ TC=25°C (W)	0.36
Maximum Pulsed Drain Current @ TC=25°C (A)	0.88
Minimum Gate Threshold Voltage (V)	0.8
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Operating Junction Temperature (°C)	-55 to 150
Part Status	Active
PCB changed	3
PPAP	No
Process Technology	DMOS
Standard Package Name	SOT
Supplier Package	SOT-23
Typical Diode Forward Voltage (V)	0.8
Typical Fall Time (ns)	7
Typical Gate Charge @ 10V (nC)	1.7
Typical Gate Charge @ Vgs (nC)	1.7@10V
Typical Gate Plateau Voltage (V)	2
Typical Gate Threshold Voltage (V)	1.3
Typical Gate to Drain Charge (nC)	0.4
Typical Gate to Source Charge (nC)	0.1
Typical Input Capacitance @ Vds (pF)	27@25V
Typical Output Capacitance (pF)	13
Typical Reverse Transfer Capacitance @ Vds (pF)	6@25V
Typical Rise Time (ns)	9
Typical Turn-Off Delay Time (ns)	20
Typical Turn-On Delay Time (ns)	2.5
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	7 ns
Forward Transconductance - Min:	0.12 S
Id - Continuous Drain Current:	220 mA
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-23-3
Part # Aliases:	BSS138_NL
Pd - Power Dissipation:	360 mW
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signals
Qg - Gate Charge:	1.7 nC
Rds On - Drain-Source Resistance:	3.5 Ohms
Rise Time:	9 ns
Series:	BSS138
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	2.5 ns
Vds - Drain-Source Breakdown Voltage:	50 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.3 V
Вес, г	0.05