BSS84W-7-F, Транзистор P-MOSFET, полевой, -50В, -0,13А, 0,2Вт, SOT323
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Описание
Описание Транзистор P-MOSFET, полевой, -50В, -0,13А, 0,2Вт, SOT323 Характеристики
Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
Product Category | Small Signal |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | P |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 50 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 2 |
Maximum Continuous Drain Current (A) | 0.13 |
Maximum Gate Source Leakage Current (nA) | 10 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (mOhm) | 10000@5V |
Typical Input Capacitance @ Vds (pF) | 45(Max)@25V |
Maximum Power Dissipation (mW) | 200 |
Typical Turn-Off Delay Time (ns) | 18 |
Typical Turn-On Delay Time (ns) | 10 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Supplier Temperature Grade | Automotive |
Packaging | Tape and Reel |
Automotive | Yes |
AEC Qualified Number | AEC-Q101 |
Pin Count | 3 |
Supplier Package | SOT-323 |
Standard Package Name | SOT-323 |
Military | No |
Mounting | Surface Mount |
Package Height | 0.95 |
Package Length | 2.15 |
Package Width | 1.3 |
PCB changed | 3 |
Lead Shape | Gull-wing |
Continuous Drain Current (Id) @ 25В°C | 130mA |
Power Dissipation-Max (Ta=25В°C) | 200mW |
Rds On - Drain-Source Resistance | 10О© @ 100mA,5V |
Transistor Polarity | P Channel |
Vds - Drain-Source Breakdown Voltage | 50V |
Vgs - Gate-Source Voltage | 2V @ 1mA |
Brand: | Diodes Incorporated |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Forward Transconductance - Min: | 0.05 S |
Id - Continuous Drain Current: | 130 mA |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-323-3 |
Pd - Power Dissipation: | 200 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signal |
Rds On - Drain-Source Resistance: | 10 Ohms |
Series: | BSS84 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Type: | Enhancement Mode Field Effect Transistor |
Typical Turn-Off Delay Time: | 18 ns |
Typical Turn-On Delay Time: | 10 ns |
Vds - Drain-Source Breakdown Voltage: | 50 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 800 mV |
Maximum Continuous Drain Current | 130 mA |
Maximum Drain Source Resistance | 10 Ω |
Maximum Drain Source Voltage | 50 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 2V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 200 mW |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Package Type | SOT-323 |
Transistor Configuration | Single |
Transistor Material | Si |
Width | 1.35mm |
Вес, г | 0.1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов