BSS84W-7-F, Транзистор P-MOSFET, полевой, -50В, -0,13А, 0,2Вт, SOT323

Фото 1/7 BSS84W-7-F, Транзистор P-MOSFET, полевой, -50В, -0,13А, 0,2Вт, SOT323
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см. техническую документацию
18 руб.
Кратность заказа 5 шт.
Добавить в корзину 5 шт. на сумму 90 руб.
Номенклатурный номер: 8017970410
Артикул: BSS84W-7-F
Бренд: DIODES INC.

Описание

Описание Транзистор P-MOSFET, полевой, -50В, -0,13А, 0,2Вт, SOT323 Характеристики
Категория Транзистор
Тип полевой
Вид MOSFET

Технические параметры

EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95
Product Category Small Signal
Configuration Single
Channel Mode Enhancement
Channel Type P
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 50
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 2
Maximum Continuous Drain Current (A) 0.13
Maximum Gate Source Leakage Current (nA) 10
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (mOhm) 10000@5V
Typical Input Capacitance @ Vds (pF) 45(Max)@25V
Maximum Power Dissipation (mW) 200
Typical Turn-Off Delay Time (ns) 18
Typical Turn-On Delay Time (ns) 10
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
Packaging Tape and Reel
Automotive Yes
AEC Qualified Number AEC-Q101
Pin Count 3
Supplier Package SOT-323
Standard Package Name SOT-323
Military No
Mounting Surface Mount
Package Height 0.95
Package Length 2.15
Package Width 1.3
PCB changed 3
Lead Shape Gull-wing
Continuous Drain Current (Id) @ 25В°C 130mA
Power Dissipation-Max (Ta=25В°C) 200mW
Rds On - Drain-Source Resistance 10О© @ 100mA,5V
Transistor Polarity P Channel
Vds - Drain-Source Breakdown Voltage 50V
Vgs - Gate-Source Voltage 2V @ 1mA
Brand: Diodes Incorporated
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 3000
Forward Transconductance - Min: 0.05 S
Id - Continuous Drain Current: 130 mA
Manufacturer: Diodes Incorporated
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: SOT-323-3
Pd - Power Dissipation: 200 mW
Product Category: MOSFET
Product Type: MOSFET
Product: MOSFET Small Signal
Rds On - Drain-Source Resistance: 10 Ohms
Series: BSS84
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: P-Channel
Transistor Type: 1 P-Channel
Type: Enhancement Mode Field Effect Transistor
Typical Turn-Off Delay Time: 18 ns
Typical Turn-On Delay Time: 10 ns
Vds - Drain-Source Breakdown Voltage: 50 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
Maximum Continuous Drain Current 130 mA
Maximum Drain Source Resistance 10 Ω
Maximum Drain Source Voltage 50 V
Maximum Gate Source Voltage -20 V, +20 V
Maximum Gate Threshold Voltage 2V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 200 mW
Minimum Operating Temperature -55 °C
Mounting Type Surface Mount
Package Type SOT-323
Transistor Configuration Single
Transistor Material Si
Width 1.35mm
Вес, г 0.1

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet BSS84W-7-F
pdf, 101 КБ
Datasheet BSS84WQ-7-F
pdf, 591 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов