BSZ040N04LS G, MOSFET N-Channel 40V 18A

PartNumber: BSZ040N04LS G
Ном. номер: 8030792064
Производитель: Infineon Technologies
BSZ040N04LS G, MOSFET N-Channel 40V 18A
Доступно на заказ более 40 шт. Отгрузка со склада в Москве 6 недель.
120 × = 600
Количество товаров должно быть кратно 5 шт.
от 25 шт. — 59 руб.
от 50 шт. — 48 руб.

Описание

Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

MOSFET Transistors, Infineon
Infineon's large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Infineon BSZ040N04LS G N-channel MOSFET Transistor, 40 A, 40 V, 8-pin TSDSON

Технические параметры

разрешение
DC/DC Converter, SMPS
Channel Mode
Enhancement
Channel Type
N
конфигурация
Quad Drain, Single Gate, Triple Source
размеры
3.4 x 3.4 x 1.1mm
высота
1.1mm
длина
3.4mm
Maximum Continuous Drain Current
40 A
Maximum Drain Source Resistance
0.0056 Ω
Maximum Drain Source Voltage
40 V
Maximum Gate Source Voltage
±20 V
максимальная рабочая температура
+150 °C
Максимальная рассеиваемая мощность
69 W
Minimum Operating Temperature
-55 °C
тип монтажа
Surface Mount
Number of Elements per Chip
1
тип упаковки
TSDSON
Pin Count
8
Typical Gate Charge @ Vgs
48 nC@ 0 → 10 V
Typical Input Capacitance @ Vds
3800 pF@ 20 V
Typical Turn-Off Delay Time
33 ns
Typical Turn-On Delay Time
8.5 ns
ширина
3.4mm
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V

Дополнительная информация

MOSFET N-ch 40V 40A OptiMOS3 Sw. TSDSON8