DN2540N3-G, MOSFET 400V 25Ohm
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
Технические параметры
| Brand: | Microchip Technology |
| Channel Mode: | Depletion |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 20 ns |
| Id - Continuous Drain Current: | 120 mA |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-92-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Rds On - Drain-Source Resistance: | 25 Ohms |
| Rise Time: | 15 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | FET |
| Vds - Drain-Source Breakdown Voltage: | 400 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Brand | Microchip Technology |
| Channel Mode | Depletion |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 20 ns |
| Height | 5.33 mm |
| Id - Continuous Drain Current | 120 mA |
| Length | 5.21 mm |
| Manufacturer | Microchip |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-92-3 |
| Packaging | Bulk |
| Pd - Power Dissipation | 1 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 25 Ohms |
| Rise Time | 15 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | FET |
| Typical Turn-Off Delay Time | 15 ns |
| Typical Turn-On Delay Time | 10 ns |
| Unit Weight | 0.016 oz |
| Vds - Drain-Source Breakdown Voltage | 400 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 4.19 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 120 mA |
| Maximum Drain Source Resistance | 25 Ω |
| Maximum Drain Source Voltage | 400 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 1 W |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-92 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Вес, г | 0.45 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
