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DS1245AB-120+, NON-VOLATILE SRAM, 1MBIT, 120NS, EDIP-32

PartNumber: DS1245AB-120+
Ном. номер: 8022899725
Производитель: Maxim Semiconductor
DS1245AB-120+, NON-VOLATILE SRAM, 1MBIT, 120NS, EDIP-32
Доступно на заказ 18 шт. Отгрузка со склада в Москве 2-3 недели.
2 690 × = 2 690
от 10 шт. — 2 560 руб.

Описание

The DS1245AB-120+ is a 1024K non-volatile SRAM in 32 pin EDIP package. This 1.048.576bit fully static non-volatile SRAM is organized as 131.072 words by 8 bits. It has self contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time. The DIP package DS1245 device can be used in place of existing 128K x 8 static RAMs directly conforming to popular bytewide 32 pin DIP standard. There is no limit on the number of write cycles that can be executed and additional support circuitry is not required for microprocessor interfacing.

• Supply voltage range from 4.75V to 5.25V
• Operating temperature range from 0°C to 70°C
• 10 years minimum data retention in the absence of external power
• Data is automatically protected during power loss
• Low power CMOS technology
• Read and write access time of 120ns
• Write protection voltage of 4.62V
• 5pF input/output capacitance

Полупроводники - Микросхемы\Память\Энергонезависимая RAM

Технические параметры

Минимальная Рабочая Температура
0°C
Максимальная Рабочая Температура
70°C
Максимальное Напряжение Питания
5.25В
Минимальное Напряжение Питания
4.75В
Количество Выводов
32вывод(-ов)
Уровень Чувствительности к Влажности (MSL)
MSL 1 - Безлимитный
Упаковка
Поштучно
Время Доступа
120нс
Стиль Корпуса Микросхемы Памяти
EDIP
Размер Памяти
1Мбит
Конфигурация Памяти NVRAM
128К x 8бит

Дополнительная информация

Datasheet DS1245AB-120+