FCP16N60N, MOSFET N-Channel 600V 16A

PartNumber: FCP16N60N
Ном. номер: 8009164091
Производитель: Fairchild Semiconductor
FCP16N60N, MOSFET N-Channel 600V 16A
Доступно на заказ более 10 шт. Отгрузка со склада в Москве 7 недель.
420 × = 420
от 10 шт. — 240 руб.
от 20 шт. — 197 руб.

Описание

SupreMOS® MOSFET, Fairchild Semiconductor
Fairchild brings a new generation of 600V Super-Junction MOSFETs - SupreMOS®.
The combination of their low RDS(on) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild's 600V SuperFET™ MOSFETs. In addition, the SupreMOS family offers a low gate charge for the same RDS(on), providing excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.
These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FCP16N60N N-channel MOSFET Transistor, 16 A, 600 V, 3-pin TO-220

Технические параметры

Typical Turn-Off Delay Time
60.3 ns
Pin Count
3
Number of Elements per Chip
1
Typical Turn-On Delay Time
15.8 ns
Maximum Gate Source Voltage
±30 V
Typical Input Capacitance @ Vds
1630 pF@ 100 V
Minimum Operating Temperature
-55 °C
тип монтажа
Through Hole
Typical Gate Charge @ Vgs
40.2 nC@ 10 V
Minimum Gate Threshold Voltage
2V
Максимальная рассеиваемая мощность
134.4 W
разрешение
Power MOSFET
Channel Type
N
Channel Mode
Enhancement
конфигурация
Single
тип упаковки
TO-220
высота
9.4mm
Maximum Drain Source Resistance
0.199 Ω
длина
10.67mm
Maximum Continuous Drain Current
16 A
максимальная рабочая температура
+150 °C
Maximum Drain Source Voltage
600 V
размеры
10.67 x 4.83 x 9.4mm
ширина
4.83mm

Дополнительная информация

FCP16N60N / FCPF16N60NT N-Channel MOSFET Data ...