FDB8441, MOSFET N-Channel 40V 80A

PartNumber: FDB8441
Ном. номер: 8120718178
Производитель: Fairchild Semiconductor
FDB8441, MOSFET N-Channel 40V 80A
Доступно на заказ 9 шт. Отгрузка со склада в Москве 7 недель.
330 × = 330

Описание

Automotive N-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FDB8441 N-channel MOSFET Transistor, 80 A, 40 V, 3-pin D2PAK

Технические параметры

Minimum Gate Threshold Voltage
2V
Maximum Gate Source Voltage
±20 V
Typical Turn-Off Delay Time
75 ns
Максимальная рассеиваемая мощность
300 W
конфигурация
Single
Channel Type
N
Channel Mode
Enhancement
тип монтажа
Surface Mount
высота
4.83mm
Maximum Drain Source Voltage
40 V
ширина
9.65mm
Pin Count
3
Maximum Continuous Drain Current
80 A
длина
10.67mm
Typical Gate Charge @ Vgs
215 nC@ 10 V
Minimum Operating Temperature
-55 °C
Maximum Drain Source Resistance
0.003 Ω
Number of Elements per Chip
1
разрешение
Power MOSFET
максимальная рабочая температура
+175 °C
размеры
10.67 x 9.65 x 4.83mm
Typical Turn-On Delay Time
23 ns
Typical Input Capacitance @ Vds
15000 pF@ 25 V
тип упаковки
D2PAK

Дополнительная информация

Trans MOSFET N-CH 40V 80A 3-Pin TO-263AB