FDB86102LZ, MOSFET N-Channel 100V 8.3

PartNumber: FDB86102LZ
Ном. номер: 8119115918
Производитель: Fairchild Semiconductor
FDB86102LZ, MOSFET N-Channel 100V 8.3
Доступно на заказ более 30 шт. Отгрузка со склада в Москве 6 недель.
140 × = 280
Количество товаров должно быть кратно 2 шт.

Описание

PowerTrench® N-Channel MOSFET, 20A to 59A, Fairchild Semiconductor

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FDB86102LZ N-channel MOSFET Transistor, 30 A, 100 V, 3-pin TO-263AB

Технические параметры

Pin Count
3
Maximum Drain Source Resistance
0.042 Ω
Number of Elements per Chip
1
разрешение
Power MOSFET
Typical Turn-On Delay Time
6.6 ns
Maximum Gate Source Voltage
±20 V
Maximum Continuous Drain Current
30 A
Typical Gate Charge @ Vgs
15.2 nC@ 10 V
Minimum Operating Temperature
-55 °C
длина
10.67mm
тип упаковки
TO-263AB
ширина
11.33mm
максимальная рабочая температура
+150 °C
высота
4.83mm
Channel Type
N
тип монтажа
Surface Mount
Channel Mode
Enhancement
Maximum Drain Source Voltage
100 V
Максимальная рассеиваемая мощность
2 W
Typical Input Capacitance @ Vds
959 pF@ 50 V
Minimum Gate Threshold Voltage
1V
размеры
10.67 x 11.33 x 4.83mm
Typical Turn-Off Delay Time
18.2 ns

Дополнительная информация

FDB86102LZ, PowerTrench 100V N-Channel MOSFET