FDC8602, MOSFET Dual N-Ch 100V 1.2

PartNumber: FDC8602
Ном. номер: 8018501808
Производитель: Fairchild Semiconductor
FDC8602, MOSFET Dual N-Ch 100V 1.2
Доступно на заказ 40 шт. Отгрузка со склада в Москве 6 недель.
110 × = 550
Количество товаров должно быть кратно 5 шт.

Описание

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer an increase in system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and a soft reverse recovery body diode, which contribute towards fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FDC8602 Dual N-channel MOSFET Transistor, 1.2 A, 100 V, 6-pin SOT-23

Технические параметры

высота
1mm
длина
3mm
Typical Input Capacitance @ Vds
53 pF@ 50 V
Minimum Operating Temperature
-55 °C
Minimum Gate Threshold Voltage
2V
разрешение
Power MOSFET
Maximum Gate Source Voltage
±20 V
Channel Mode
Enhancement
Максимальная рассеиваемая мощность
0.96 W
Maximum Drain Source Voltage
100 V
Channel Type
N
тип монтажа
Surface Mount
Pin Count
6
ширина
1.7mm
Typical Turn-On Delay Time
3.5 ns
Maximum Drain Source Resistance
0.6 Ω
Maximum Continuous Drain Current
1.2 A
максимальная рабочая температура
+150 °C
размеры
3 x 1.7 x 1mm
Number of Elements per Chip
2
Typical Turn-Off Delay Time
5.4 ns
Typical Gate Charge @ Vgs
1.2 nC@ 10 V
тип упаковки
SOT-23
конфигурация
Dual

Дополнительная информация

FDC8602, PowerTrench Dual 100V N-Channel MOSFET