FDD5614P, MOSFET P-Channel 60V 15A

PartNumber: FDD5614P
Ном. номер: 8036375910
Производитель: Fairchild Semiconductor
FDD5614P, MOSFET P-Channel 60V 15A
Доступно на заказ более 50 шт. Отгрузка со склада в Москве 6 недель.
88 × = 440
Количество товаров должно быть кратно 5 шт.
от 25 шт. — 44 руб.
от 100 шт. — 25.40 руб.

Описание

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FDD5614P P-channel MOSFET Transistor, 15 A, 60 V, 3-pin TO-252

Технические параметры

Maximum Drain Source Resistance
0.1 Ω
тип упаковки
TO-252
конфигурация
Single
Maximum Continuous Drain Current
15 A
Channel Mode
Enhancement
ширина
6.22mm
Pin Count
3
Channel Type
P
максимальная рабочая температура
+175 °C
разрешение
Power MOSFET
Number of Elements per Chip
1
размеры
6.73 x 6.22 x 2.39mm
высота
2.39mm
длина
6.73mm
Maximum Drain Source Voltage
60 V
тип монтажа
Surface Mount
Typical Input Capacitance @ Vds
759 pF@ 30 V
Minimum Gate Threshold Voltage
1V
Typical Gate Charge @ Vgs
15 nC@ 10 V
Максимальная рассеиваемая мощность
42 W
Typical Turn-On Delay Time
7 ns
Maximum Gate Source Voltage
±20 V
Minimum Operating Temperature
-55 °C
Typical Turn-Off Delay Time
19 ns

Дополнительная информация

Datasheet