FDG6332C_F085, Двойной МОП-транзистор, N и P Канал, 700 мА, 20 В, 0.18 Ом, 4.5 В, 1.1 В
The FDG6332C_F085 is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive and packages are impractical. It is suitable for use with DC-to-DC converters, load switch and LCD display inverter applications.
• Low gate charge
• High performance Trench technology for extremely low RDS (ON)
• Small footprint
• Low profile
Полупроводники - Дискретные\Транзисторы\МОП-транзисторы