FDG8850NZ, MOSFET N-Channel 30V 0.75

PartNumber: FDG8850NZ
Ном. номер: 8046387261
Производитель: Fairchild Semiconductor
FDG8850NZ, MOSFET N-Channel 30V 0.75
Доступно на заказ более 100 шт. Отгрузка со склада в Москве 6 недель.
47 × = 470
Количество товаров должно быть кратно 10 шт.
от 50 шт. — 29 руб.
от 100 шт. — 17.40 руб.

Описание

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer an increase in system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and a soft reverse recovery body diode, which contribute towards fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FDG8850NZ Dual N-channel MOSFET Transistor, 0.75 A, 30 V, 6-pin SC-70

Технические параметры

Typical Gate Charge @ Vgs
1.03 nC@ 4.5 V
тип монтажа
Surface Mount
Channel Type
N
Channel Mode
Enhancement
Pin Count
6
конфигурация
Dual
Maximum Continuous Drain Current
0.75 A
Minimum Operating Temperature
-55 °C
Typical Turn-On Delay Time
4 ns
разрешение
Power MOSFET
максимальная рабочая температура
+150 °C
тип упаковки
SC-70
высота
1mm
Maximum Drain Source Resistance
0.4 Ω
ширина
1.25mm
размеры
2 x 1.25 x 1mm
Number of Elements per Chip
2
длина
2mm
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
±12 V
Typical Input Capacitance @ Vds
90 pF@ 10 V
Максимальная рассеиваемая мощность
0.36 W
Minimum Gate Threshold Voltage
0.65V
Typical Turn-Off Delay Time
9 ns

Дополнительная информация

Trans MOSFET N-CH 30V 0.75A 6-Pin SC-70