FDMC3612, MOSFET N-Channel 100V 3.3

PartNumber: FDMC3612
Ном. номер: 8089114513
Производитель: Fairchild Semiconductor
FDMC3612, MOSFET N-Channel 100V 3.3
Доступно на заказ более 70 шт. Отгрузка со склада в Москве 7 недель.
70 × = 350
Количество товаров должно быть кратно 5 шт.
от 50 шт. — 39 руб.
от 750 шт. — 31.36 руб.

Описание

PowerTrench® N-Channel MOSFET, 10A to 19A, Fairchild Semiconductor

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FDMC3612 N-channel MOSFET Transistor, 16 A, 100 V, 8-pin Power 33

Технические параметры

размеры
3.3 x 3.3 x 0.75mm
Maximum Drain Source Resistance
0.212 Ω
длина
3.3mm
Maximum Drain Source Voltage
100 V
тип упаковки
Power 33
Maximum Continuous Drain Current
16 A
максимальная рабочая температура
+150 °C
высота
0.75mm
Number of Elements per Chip
1
Максимальная рассеиваемая мощность
35 W
Minimum Gate Threshold Voltage
2V
Maximum Gate Source Voltage
±20 V
Typical Turn-On Delay Time
7.4 ns
конфигурация
Quad Drain, Triple Source
Typical Input Capacitance @ Vds
662 pF@ 50 V
Minimum Operating Temperature
-55 °C
Typical Turn-Off Delay Time
19 ns
разрешение
Power MOSFET
ширина
3.3mm
Pin Count
8
тип монтажа
Surface Mount
Channel Mode
Enhancement
Channel Type
N
Typical Gate Charge @ Vgs
14.4 nC@ 0 → 10 V

Дополнительная информация

FDMC3612, Power Trench 100V N-Channel MOSFET