FDN302P, MOSFET P-Channel 20V 2.4A

PartNumber: FDN302P
Ном. номер: 8060955598
Производитель: Fairchild Semiconductor
FDN302P, MOSFET P-Channel 20V 2.4A
Доступно на заказ более 80 шт. Отгрузка со склада в Москве 6 недель.
60 × = 300
Количество товаров должно быть кратно 5 шт.
от 25 шт. — 30 руб.
от 100 шт. — 17.10 руб.

Описание

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FDN302P P-channel MOSFET Transistor, 2.4 A, 20 V, 3-pin SOT-23

Технические параметры

Typical Turn-On Delay Time
13 ns
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
ширина
1.4mm
длина
2.92mm
разрешение
Power MOSFET
Channel Type
P
Максимальная рассеиваемая мощность
0.5 W
Typical Turn-Off Delay Time
25 ns
Pin Count
3
тип упаковки
SOT-23
Typical Input Capacitance @ Vds
882 pF@ 10 V
Typical Gate Charge @ Vgs
9 nC@ 4.5 V
Minimum Gate Threshold Voltage
0.6V
конфигурация
Single
Maximum Gate Source Voltage
±12 V
тип монтажа
Surface Mount
Channel Mode
Enhancement
размеры
2.92 x 1.4 x 0.94mm
Maximum Drain Source Voltage
20 V
высота
0.94mm
максимальная рабочая температура
+150 °C
Maximum Drain Source Resistance
0.055 Ω
Maximum Continuous Drain Current
2.4 A

Дополнительная информация

Trans MOSFET P-CH 20V 2.4A 3- SuperSOT