FDN352AP, MOSFET P-Channel 30V 1.3A

PartNumber: FDN352AP
Ном. номер: 8032534312
Производитель: Fairchild Semiconductor
FDN352AP, MOSFET P-Channel 30V 1.3A
Доступно на заказ 110 шт. Отгрузка со склада в Москве 6 недель.
38 × = 380
Количество товаров должно быть кратно 10 шт.
от 50 шт. — 23 руб.
от 100 шт. — 12.20 руб.

Описание

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FDN352AP P-channel MOSFET Transistor, 1.3 A, 30 V, 3-pin SOT-23

Технические параметры

Maximum Drain Source Voltage
30 V
Maximum Continuous Drain Current
1.3 A
Pin Count
3
тип упаковки
SOT-23
разрешение
Power MOSFET
длина
2.92mm
Typical Turn-On Delay Time
4 ns
Number of Elements per Chip
1
ширина
1.4mm
Channel Type
P
тип монтажа
Surface Mount
высота
0.94mm
максимальная рабочая температура
+150 °C
конфигурация
Single
Typical Input Capacitance @ Vds
150 pF@ 15 V
Minimum Operating Temperature
-55 °C
Typical Gate Charge @ Vgs
1.4 nC@ 4.5 V
Typical Turn-Off Delay Time
10 ns
Minimum Gate Threshold Voltage
0.8V
Maximum Gate Source Voltage
±25 V
Максимальная рассеиваемая мощность
0.5 W
Maximum Drain Source Resistance
0.18 Ω
Channel Mode
Enhancement
размеры
2.92 x 1.4 x 0.94mm

Дополнительная информация

Trans MOSFET P-CH 30V 1.3A 3- SuperSOT