FDP150N10A_F102, MOSFET N-Channel 100V 50A

PartNumber: FDP150N10A_F102
Ном. номер: 8092549829
Производитель: Fairchild Semiconductor
FDP150N10A_F102, MOSFET N-Channel 100V 50A
Доступно на заказ более 10 шт. Отгрузка со склада в Москве 6 недель.
270 × = 540
Количество товаров должно быть кратно 2 шт.
от 20 шт. — 140 руб.

Описание

PowerTrench® N-Channel MOSFET, 20A to 59A, Fairchild Semiconductor

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FDP150N10A_F102 N-channel MOSFET Transistor, 50 A, 100 V, 3-pin TO-220

Технические параметры

максимальная рабочая температура
+175 °C
тип упаковки
TO-220
размеры
10.36 x 4.672 x 15.215mm
Maximum Drain Source Voltage
100 V
Maximum Continuous Drain Current
50 A
высота
15.215mm
Maximum Drain Source Resistance
0.015 Ω
длина
10.36mm
конфигурация
Single
Typical Input Capacitance @ Vds
1080 pF@ 50 V
Channel Type
N
Typical Turn-Off Delay Time
21 ns
ширина
4.672mm
Pin Count
3
Typical Turn-On Delay Time
13 ns
Minimum Gate Threshold Voltage
2V
Number of Elements per Chip
1
разрешение
Power MOSFET
тип монтажа
Through Hole
Maximum Gate Source Voltage
±20 V
Minimum Operating Temperature
-55 °C
Typical Gate Charge @ Vgs
16.2 nC@ 10 V
Максимальная рассеиваемая мощность
91 W
Channel Mode
Enhancement

Дополнительная информация

FDP150N10A_F102, 100V N-Channel PowerTrench MOSFET