FDP2532, MOSFET N-Channel 150V 8A

PartNumber: FDP2532
Ном. номер: 8051976429
Производитель: Fairchild Semiconductor
FDP2532, MOSFET N-Channel 150V 8A
Доступно на заказ более 10 шт. Отгрузка со склада в Москве 6 недель.
420 × = 420
от 25 шт. — 200 руб.
от 100 шт. — 152.60 руб.

Описание

PowerTrench® N-Channel MOSFET, up to 9A, Fairchild Semiconductor

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FDP2532 N-channel MOSFET Transistor, 8 A, 150 V, 3-pin TO-220AB

Технические параметры

Maximum Drain Source Voltage
150 V
Maximum Continuous Drain Current
8 A
максимальная рабочая температура
+175 °C
высота
9.4mm
конфигурация
Single
Pin Count
3
Typical Gate Charge @ Vgs
82 nC@ 10 V
длина
10.67mm
Channel Type
N
Channel Mode
Enhancement
Maximum Drain Source Resistance
0.016 Ω
тип упаковки
TO-220AB
размеры
10.67 x 4.83 x 9.4mm
Maximum Gate Source Voltage
±20 V
Typical Input Capacitance @ Vds
5870 pF@ 25 V
Minimum Operating Temperature
-55 °C
Максимальная рассеиваемая мощность
310 W
тип монтажа
Through Hole
разрешение
Power MOSFET
Typical Turn-Off Delay Time
39 ns
Minimum Gate Threshold Voltage
2V
Typical Turn-On Delay Time
16 ns
Number of Elements per Chip
1
ширина
4.83mm

Дополнительная информация

Datasheet