FDPF5N60NZ, MOSFET N-Ch 600V 4.5A Uni

PartNumber: FDPF5N60NZ
Ном. номер: 8114886897
Производитель: Fairchild Semiconductor
FDPF5N60NZ, MOSFET N-Ch 600V 4.5A Uni
Доступно на заказ более 30 шт. Отгрузка со склада в Москве 6 недель.
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Количество товаров должно быть кратно 5 шт.
от 25 шт. — 82 руб.
от 50 шт. — 59 руб.

Описание

UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FDPF5N60NZ N-channel MOSFET Transistor, 4.5 A, 600 V, 3-pin TO-220F

Технические параметры

Number of Elements per Chip
1
разрешение
Power MOSFET
Minimum Operating Temperature
-55 °C
тип монтажа
Through Hole
Typical Turn-Off Delay Time
35 ns
Typical Gate Charge @ Vgs
10 nC@ 10 V
Channel Type
N
Minimum Gate Threshold Voltage
3V
ширина
4.7mm
Maximum Gate Source Voltage
±25 V
Pin Count
3
Typical Input Capacitance @ Vds
450 pF@ 25 V
Максимальная рассеиваемая мощность
33 W
Channel Mode
Enhancement
максимальная рабочая температура
+150 °C
Maximum Drain Source Voltage
600 V
высота
15.87mm
Maximum Drain Source Resistance
2 Ω
длина
10.16mm
Typical Turn-On Delay Time
15 ns
Maximum Continuous Drain Current
4.5 A
тип упаковки
TO-220F
размеры
10.16 x 4.7 x 15.87mm

Дополнительная информация

FDP5N60NZ/FDPF5N60NZ, UniFET-II 600V ...