FDS2672, MOSFET N-Channel 200V 3.9

PartNumber: FDS2672
Ном. номер: 8039718266
Производитель: Fairchild Semiconductor
FDS2672, MOSFET N-Channel 200V 3.9
Доступно на заказ 25 шт. Отгрузка со склада в Москве 7 недель.
160 × = 800
Количество товаров должно быть кратно 5 шт.
от 25 шт. — 110 руб.

Описание

Automotive N-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FDS2672 N-channel MOSFET Transistor, 3.9 A, 200 V, 8-pin SOIC

Технические параметры

разрешение
Power MOSFET
Maximum Continuous Drain Current
3.9 A
Максимальная рассеиваемая мощность
2.5 W
ширина
4mm
Typical Input Capacitance @ Vds
1905 pF@ 100 V
Typical Turn-On Delay Time
22 ns
тип монтажа
Surface Mount
Pin Count
8
Number of Elements per Chip
1
Minimum Gate Threshold Voltage
2V
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
33 nC@ 10 V
Typical Turn-Off Delay Time
35 ns
длина
5mm
Channel Mode
Enhancement
Channel Type
N
тип упаковки
SOIC
размеры
5 x 4 x 1.5mm
конфигурация
Quad Drain, Single, Triple Source
Maximum Drain Source Voltage
200 V
максимальная рабочая температура
+150 °C
Maximum Drain Source Resistance
0.07 Ω
высота
1.5mm

Дополнительная информация

Trans MOSFET N-CH 200V 3.9A 8-Pin SOIC