FDS4559_F085, Complement. Dual MOSFET 6

PartNumber: FDS4559_F085
Ном. номер: 8111154626
Производитель: Fairchild Semiconductor
FDS4559_F085, Complement. Dual MOSFET 6
Доступно на заказ более 30 шт. Отгрузка со склада в Москве 6 недель.
150 × = 750
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от 50 шт. — 110 руб.

Описание

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FDS4559_F085 Dual N/P-channel MOSFET Transistor, 8-pin SOIC

Технические параметры

высота
1.575mm
Channel Mode
Enhancement
максимальная рабочая температура
+150 °C
Maximum Continuous Drain Current
3.5 (P) A, 4.5 (N) A
длина
4.9mm
тип упаковки
SOIC
Maximum Drain Source Voltage
60 (N) V, -60 (P) V
размеры
4.9 x 3.9 x 1.575mm
Максимальная рассеиваемая мощность
2 W
Minimum Gate Threshold Voltage
1V
Number of Elements per Chip
2
Pin Count
8
разрешение
Power Trench MOSFET
Typical Turn-On Delay Time
11 (N) ns, 7 (P) ns
тип монтажа
Surface Mount
конфигурация
Dual
ширина
3.9mm
Maximum Drain Source Resistance
0.094 (Q1) Ω, 0.19 (Q2) Ω
Maximum Gate Source Voltage
±20 V
Typical Turn-Off Delay Time
19 ns
Typical Input Capacitance @ Vds
650 pF@ 25 V, 759 pF@ -30 V
Typical Gate Charge @ Vgs
12.5 (Q1) nC@ 10 C, 15 (Q2) nC@ 10 V
Minimum Operating Temperature
-55 °C
Channel Type
N, P

Дополнительная информация

FDS4559_F085, 60V Complementary PowerTrench ...