FDS4935A, MOSFET P-Channel 30V 7A S

PartNumber: FDS4935A
Ном. номер: 8022581140
Производитель: Fairchild Semiconductor
FDS4935A, MOSFET P-Channel 30V 7A S
Доступно на заказ более 30 шт. Отгрузка со склада в Москве 6 недель.
130 × = 650
Количество товаров должно быть кратно 5 шт.
от 25 шт. — 68 руб.

Описание

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FDS4935A Dual P-channel MOSFET Transistor, 7 A, 30 V, 8-pin SOIC

Технические параметры

Maximum Drain Source Resistance
0.023 Ω
максимальная рабочая температура
+175 °C
высота
1.5mm
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
тип упаковки
SOIC
ширина
4mm
Typical Turn-On Delay Time
13 ns
конфигурация
Dual, Dual Drain
длина
5mm
Channel Type
P
разрешение
Power MOSFET
Minimum Operating Temperature
-55 °C
Typical Input Capacitance @ Vds
1233 pF@ 15 V
Typical Gate Charge @ Vgs
15 nC@ 5 V
Number of Elements per Chip
2
размеры
5 x 4 x 1.5mm
Typical Turn-Off Delay Time
48 ns
тип монтажа
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Maximum Gate Source Voltage
±20 V
Максимальная рассеиваемая мощность
2 W
Minimum Gate Threshold Voltage
1V

Дополнительная информация

Trans MOSFET P-CH 30V 7A 8-Pin SOIC