FDS6679AZ, MOSFET P-Channel 30V 13A

PartNumber: FDS6679AZ
Ном. номер: 8104677544
Производитель: Fairchild Semiconductor
FDS6679AZ, MOSFET P-Channel 30V 13A
Доступно на заказ более 40 шт. Отгрузка со склада в Москве 6 недель.
120 × = 600
Количество товаров должно быть кратно 5 шт.
от 25 шт. — 65 руб.
от 100 шт. — 44.30 руб.

Описание

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FDS6679AZ P-channel MOSFET Transistor, 13 A, 30 V, 8-pin SOIC

Технические параметры

Максимальная рассеиваемая мощность
2.5 W
Maximum Gate Source Voltage
±25 V
Minimum Operating Temperature
-55 °C
ширина
4mm
Maximum Continuous Drain Current
13 A
Typical Input Capacitance @ Vds
2890 pF@ 15 V
тип монтажа
Surface Mount
Pin Count
8
Channel Mode
Enhancement
максимальная рабочая температура
+150 °C
высота
1.5mm
Typical Turn-Off Delay Time
210 ns
Typical Turn-On Delay Time
13 ns
Number of Elements per Chip
1
разрешение
Power MOSFET
Maximum Drain Source Voltage
30 V
размеры
5 x 4 x 1.5mm
тип упаковки
SOIC
Maximum Drain Source Resistance
0.009 Ω
Minimum Gate Threshold Voltage
1V
конфигурация
Quad Drain, Single, Triple Source
Typical Gate Charge @ Vgs
68 nC@ 10 V
длина
5mm
Channel Type
P

Дополнительная информация

Trans MOSFET P-CH 30V 13A 8-Pin SOIC