FDS6930B, Транзистор

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Номенклатурный номер: 8007847528
Артикул: FDS6930B

Описание

Полевые МОП-транзисторы Fairchild PowerTrench

Технические параметры

Brand: onsemi/Fairchild
Channel Mode: Enhancement
Configuration: Dual
Factory Pack Quantity: Factory Pack Quantity: 2500
Fall Time: 2 ns
Forward Transconductance - Min: 19 S
Id - Continuous Drain Current: 5.5 A
Manufacturer: onsemi
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Package / Case: SOIC-8
Part # Aliases: FDS6930B_NL
Pd - Power Dissipation: 2 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 3.8 nC
Rds On - Drain-Source Resistance: 38 mOhms
Rise Time: 6 ns
Series: FDS6930B
Subcategory: MOSFETs
Technology: Si
Tradename: PowerTrench
Transistor Polarity: N-Channel
Transistor Type: 2 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 16 ns
Typical Turn-On Delay Time: 6 ns
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Automotive No
Channel Mode Enhancement
Channel Type N
Configuration Dual Dual Drain
ECCN (US) EAR99
EU RoHS Compliant
Lead Shape Gull-wing
Maximum Continuous Drain Current (A) 5.5
Maximum Continuous Drain Current on PCB @ TC=25°C (A) 5.5
Maximum Diode Forward Voltage (V) 1.2
Maximum Drain Source Resistance (mOhm) 38@10V
Maximum Drain Source Voltage (V) 30
Maximum Gate Source Leakage Current (nA) 100
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 3
Maximum IDSS (uA) 1
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 135
Maximum Operating Temperature (°C) 150
Maximum Positive Gate Source Voltage (V) 20
Maximum Power Dissipation (mW) 2000
Maximum Power Dissipation on PCB @ TC=25°C (W) 2
Maximum Pulsed Drain Current @ TC=25°C (A) 20
Minimum Gate Threshold Voltage (V) 1
Minimum Operating Temperature (°C) -55
Mounting Surface Mount
Number of Elements per Chip 2
Operating Junction Temperature (°C) -55 to 150
Packaging Tape and Reel
Part Status Active
PCB changed 8
Pin Count 8
PPAP No
Process Technology PowerTrench
Product Category Power MOSFET
Standard Package Name SO
Supplier Package SOIC
Typical Diode Forward Voltage (V) 0.8
Typical Fall Time (ns) 2
Typical Gate Charge @ Vgs (nC) 2.7@5V
Typical Gate Plateau Voltage (V) 3
Typical Gate Threshold Voltage (V) 1.9
Typical Gate to Drain Charge (nC) 0.7
Typical Gate to Source Charge (nC) 1
Typical Input Capacitance @ Vds (pF) 310@15V
Typical Output Capacitance (pF) 90
Typical Reverse Recovery Charge (nC) 6
Typical Reverse Recovery Time (ns) 16
Typical Reverse Transfer Capacitance @ Vds (pF) 40@15V
Typical Rise Time (ns) 6
Typical Turn-Off Delay Time (ns) 16
Typical Turn-On Delay Time (ns) 6
Case SO8
Drain current 5.5A
Drain-source voltage 20V
Gate charge 3.8nC
Gate-source voltage ±20V
Kind of channel enhanced
Kind of package reel, tape
Manufacturer ONSEMI
On-state resistance 62mΩ
Polarisation unipolar
Power dissipation 2W
Technology PowerTrench®
Type of transistor N-MOSFET x2
Maximum Continuous Drain Current 5.5 A
Maximum Drain Source Resistance 38 mΩ
Maximum Drain Source Voltage 30 V
Maximum Gate Source Voltage -20 V, +20 V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 2 W
Minimum Gate Threshold Voltage 1V
Minimum Operating Temperature -55 °C
Mounting Type Surface Mount
Package Type SOIC
Series PowerTrench
Transistor Configuration Isolated
Transistor Material Si
Typical Gate Charge @ Vgs 2.7 nC @ 5 V
Width 4mm

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