FDV301N, Транзистор N-CH 25V 220MA [SOT-23]

Артикул: FDV301N
Ном. номер: 9010000157
Производитель: Fairchild Semiconductor
Фото 1/3 FDV301N, Транзистор N-CH 25V 220MA [SOT-23]
Фото 2/3 FDV301N, Транзистор N-CH 25V 220MA [SOT-23]Фото 3/3 FDV301N, Транзистор N-CH 25V 220MA [SOT-23]
Доступно на заказ более 1000 шт. Отгрузка со склада в Москве 5 рабочих дней.
4 × = 280
Минимальное количество для заказа 70 шт.
от 500 шт. — 1.90 руб.


The FDV301N is a 25V N-channel Digital Field Effect Transistor produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. It has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values. This product is general usage and suitable for many different applications.

• Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th)<1.06V)
• Gate-source Zener for ESD ruggedness (>6kV human body model)
• Replace multiple NPN digital transistors with one DMOS FET
• 8V Gate source voltage (VGSS)
• 357°C/W Thermal resistance, junction to ambient

Техническая документация

pdf, 276 КБ

Дополнительная информация

Datasheet FDV301N
Datasheet FDV301N
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов