FDV301N, МОП-транзистор, N Канал, 220 мА, 25 В, 3.1 Ом, 4.5 В, 850 мВ
The FDV301N is a 25V N-channel Digital Field Effect Transistor produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. It has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values. This product is general usage and suitable for many different applications.
• Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th)<1.06V)
• Gate-source Zener for ESD ruggedness (>6kV human body model)
• Replace multiple NPN digital transistors with one DMOS FET
• 8V Gate source voltage (VGSS)
• 357°C/W Thermal resistance, junction to ambient
Полупроводники - Дискретные\Транзисторы\МОП-транзисторы