FP15R12W1T4_B3, IGBT Modules IGBT 1200V 15A
12 400 руб.
от 10 шт. —
10 010 руб.
от 24 шт. —
8 770 руб.
от 48 шт. —
8 177.77 руб.
Добавить в корзину 1 шт.
на сумму 12 400 руб.
Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.85 V |
| Configuration: | 3-Phase Inverter |
| Continuous Collector Current at 25 C: | 28 A |
| Factory Pack Quantity: | 24 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Packaging: | Tray |
| Part # Aliases: | SP000255356 FP15R12W1T4B3BOMA1 |
| Pd - Power Dissipation: | 130 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Вес, г | 24 |
