FQA140N10, MOSFET N-Channel 100V 140

PartNumber: FQA140N10
Ном. номер: 8068728817
Производитель: Fairchild Semiconductor
FQA140N10, MOSFET N-Channel 100V 140
Доступно на заказ более 8 шт. Отгрузка со склада в Москве 6 недель.
610 × = 610
от 25 шт. — 310 руб.

Описание

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FQA140N10 N-channel MOSFET Transistor, 140 A, 100 V, 3-pin TO-3PN

Технические параметры

конфигурация
Single
Typical Input Capacitance @ Vds
6100 pF@ 25 V
размеры
15.8 x 5 x 18.9mm
Channel Type
N
Channel Mode
Enhancement
Typical Turn-On Delay Time
75 ns
Number of Elements per Chip
1
разрешение
Power MOSFET
ширина
5mm
Typical Gate Charge @ Vgs
220 nC@ 10 V
Minimum Operating Temperature
-55 °C
Minimum Gate Threshold Voltage
2V
длина
15.8mm
тип монтажа
Through Hole
Typical Turn-Off Delay Time
350 ns
Maximum Gate Source Voltage
±25 V
Pin Count
3
Максимальная рассеиваемая мощность
375 W
Maximum Continuous Drain Current
140 A
максимальная рабочая температура
+175 °C
Maximum Drain Source Voltage
100 V
тип упаковки
TO-3PN
высота
18.9mm
Maximum Drain Source Resistance
0.01 Ω

Дополнительная информация

Trans MOSFET N-CH 100V 140A 3-Pin TO-3P