FQA62N25C, MOSFET N-Channel 250V 62A

PartNumber: FQA62N25C
Ном. номер: 8037204252
Производитель: Fairchild Semiconductor
FQA62N25C, MOSFET N-Channel 250V 62A
Доступно на заказ 2 шт. Отгрузка со склада в Москве 7 недель.
660 × = 660

Описание

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FQA62N25C N-channel MOSFET Transistor, 62 A, 250 V, 3-pin TO-3PN

Технические параметры

Maximum Gate Source Voltage
±30 V
Максимальная рассеиваемая мощность
298 W
Minimum Gate Threshold Voltage
2V
Number of Elements per Chip
1
разрешение
Power MOSFET
ширина
5mm
тип монтажа
Through Hole
Typical Input Capacitance @ Vds
4830 pF@ 25 V
Typical Gate Charge @ Vgs
100 nC@ 10 V
Minimum Operating Temperature
-55 °C
Typical Turn-On Delay Time
75 ns
Channel Type
N
Channel Mode
Enhancement
конфигурация
Single
Pin Count
3
Maximum Drain Source Voltage
250 V
Maximum Continuous Drain Current
62 A
Maximum Drain Source Resistance
0.035 Ω
максимальная рабочая температура
+150 °C
тип упаковки
TO-3PN
высота
18.9mm
размеры
15.8 x 5 x 18.9mm
длина
15.8mm
Typical Turn-Off Delay Time
245 ns

Дополнительная информация

Trans MOSFET N-CH 250V 62A 3-Pin TO-3P