FQA65N20, MOSFET N-Channel 200V 65A

PartNumber: FQA65N20
Ном. номер: 8063533650
Производитель: Fairchild Semiconductor
FQA65N20, MOSFET N-Channel 200V 65A
Доступно на заказ более 7 шт. Отгрузка со склада в Москве 6 недель.
640 × = 640
от 25 шт. — 310 руб.

Описание

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FQA65N20 N-channel MOSFET Transistor, 65 A, 200 V, 3-pin TO-3PN

Технические параметры

Typical Turn-On Delay Time
120 ns
Number of Elements per Chip
1
разрешение
Power MOSFET
длина
15.8mm
Максимальная рассеиваемая мощность
310 W
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
±30 V
конфигурация
Single
Channel Type
N
Channel Mode
Enhancement
размеры
15.8 x 5 x 18.9mm
Minimum Gate Threshold Voltage
3V
тип монтажа
Through Hole
ширина
5mm
Typical Input Capacitance @ Vds
6600 pF@ 25 V
Pin Count
3
Typical Turn-Off Delay Time
340 ns
Typical Gate Charge @ Vgs
170 nC@ 10 V
тип упаковки
TO-3PN
высота
18.9mm
максимальная рабочая температура
+150 °C
Maximum Drain Source Voltage
200 V
Maximum Continuous Drain Current
65 A
Maximum Drain Source Resistance
0.032 Ω

Дополнительная информация

Trans MOSFET N-CH 200V 65A 3-Pin TO-3P