FQB1P50TM, MOSFET P-Channel 500V 1.5

PartNumber: FQB1P50TM
Ном. номер: 8084832871
Производитель: Fairchild Semiconductor
FQB1P50TM, MOSFET P-Channel 500V 1.5
Доступно на заказ более 20 шт. Отгрузка со склада в Москве 6 недель.
190 × = 950
Количество товаров должно быть кратно 5 шт.
от 50 шт. — 130 руб.

Описание

Enhancement Mode P-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FQB1P50TM P-channel MOSFET Transistor, 1.5 A, -500 V, 3-pin D2PAK

Технические параметры

ширина
10.67mm
Number of Elements per Chip
1
размеры
9.65 x 10.67 x 4.83mm
Maximum Drain Source Voltage
-500 V
длина
9.65mm
Typical Turn-Off Delay Time
27 ns
Pin Count
3
Максимальная рассеиваемая мощность
63 W
Channel Mode
Enhancement
тип монтажа
Surface Mount
разрешение
Power MOSFET
Maximum Gate Source Voltage
±30 V
Channel Type
P
Minimum Operating Temperature
-55 °C
Typical Turn-On Delay Time
9 ns
Maximum Drain Source Resistance
10.5 Ω
максимальная рабочая температура
+150 °C
высота
4.83mm
Typical Input Capacitance @ Vds
270 pF@ -25 V
Minimum Gate Threshold Voltage
3V
тип упаковки
D2PAK
Typical Gate Charge @ Vgs
11 nC@ -10 V
Maximum Continuous Drain Current
1.5 A

Дополнительная информация

FQB1P50/FQI1P50, QFET -500V P-Channel MOSFET