FQD12N20LTM, MOSFET N-Channel 200V 9A

PartNumber: FQD12N20LTM
Ном. номер: 8046112180
Производитель: Fairchild Semiconductor
FQD12N20LTM, MOSFET N-Channel 200V 9A
Доступно на заказ более 30 шт. Отгрузка со склада в Москве 7 недель.
130 × = 650
Количество товаров должно быть кратно 5 шт.
от 25 шт. — 65 руб.

Описание

QFET® N-Channel MOSFET, 6A to 10A, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FQD12N20LTM N-channel MOSFET Transistor, 9 A, 200 V, 3-pin D-PAK

Технические параметры

разрешение
Power MOSFET
размеры
6.6 x 6.1 x 2.3mm
Maximum Gate Source Voltage
±20 V
Typical Input Capacitance @ Vds
830 pF@ 25 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Typical Turn-Off Delay Time
60 ns
максимальная рабочая температура
+150 °C
тип монтажа
Surface Mount
Maximum Drain Source Voltage
200 V
конфигурация
Single
ширина
6.1mm
Channel Type
N
Channel Mode
Enhancement
тип упаковки
D-PAK
Maximum Continuous Drain Current
9 A
Максимальная рассеиваемая мощность
2.5 W
Typical Gate Charge @ Vgs
16 nC@ 5 V
Minimum Gate Threshold Voltage
1V
Typical Turn-On Delay Time
15 ns
длина
6.6mm
Pin Count
3
высота
2.3mm
Maximum Drain Source Resistance
0.28 Ω

Дополнительная информация

Trans MOSFET N-CH 200V 9A 3-Pin DPAK