FQD5P10TM, MOSFET, Fairchild, FQD5P1

PartNumber: FQD5P10TM
Ном. номер: 8056510406
Производитель: Fairchild Semiconductor
FQD5P10TM, MOSFET, Fairchild, FQD5P1
Доступно на заказ 70 шт. Отгрузка со склада в Москве 7 недель.
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от 20 шт. — 43 руб.

Описание

QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FQD5P10TM P-channel MOSFET Transistor, 2.28 A, -100 V, 3-Pin DPAK

Технические параметры

разрешение
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
конфигурация
Single
Dimensions
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current
2.28 A
Maximum Drain Source Resistance
0.001 Ω
Maximum Drain Source Voltage
-100 V
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Максимальная рассеиваемая мощность
25 W
Minimum Operating Temperature
-55 °C
Number of Elements per Chip
1
Package Type
DPAK
Pin Count
3
Typical Gate Charge @ Vgs
6.3 nC@ -10 V
Typical Input Capacitance @ Vds
190 pF@ -25 V
Typical Turn-Off Delay Time
12 ns
Typical Turn-On Delay Time
9 ns
Width
6.22mm
Minimum Gate Threshold Voltage
2V
высота
2.39mm
Length
6.73mm
Mounting Type
Surface Mount

Дополнительная информация

FQD5P10, P-Channel QFET MOSFET -100V -3.6A ...