FQD7N30TM, MOSFET N-Channel 300V 5.5

PartNumber: FQD7N30TM
Ном. номер: 8083879354
Производитель: Fairchild Semiconductor
FQD7N30TM, MOSFET N-Channel 300V 5.5
Доступно на заказ 20 шт. Отгрузка со склада в Москве 6 недель.
90 × = 450
Количество товаров должно быть кратно 5 шт.

Описание

QFET® N-Channel MOSFET, up to 5A, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FQD7N30TM N-channel MOSFET Transistor, 5.5 A, 300 V, 3-pin D-PAK

Технические параметры

Maximum Continuous Drain Current
5.5 A
конфигурация
Single
Channel Mode
Enhancement
Channel Type
N
ширина
6.1mm
Minimum Gate Threshold Voltage
3V
тип монтажа
Surface Mount
Typical Turn-Off Delay Time
25 ns
Typical Input Capacitance @ Vds
470 pF@ 25 V
Pin Count
3
длина
6.6mm
Maximum Drain Source Voltage
300 V
Maximum Drain Source Resistance
0.7 Ω
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
13 nC@ 10 V
размеры
6.6 x 6.1 x 2.3mm
Minimum Operating Temperature
-55 °C
Typical Turn-On Delay Time
13 ns
Number of Elements per Chip
1
разрешение
Power MOSFET
Максимальная рассеиваемая мощность
2.5 W
тип упаковки
D-PAK
максимальная рабочая температура
+150 °C
высота
2.3mm

Дополнительная информация

Trans MOSFET N-CH 300V 5.5A 3-Pin DPAK