FQP13N06L, MOSFET N-Channel 60V 13.6

PartNumber: FQP13N06L
Ном. номер: 8073922364
Производитель: Fairchild Semiconductor
FQP13N06L, MOSFET N-Channel 60V 13.6
Доступно на заказ более 40 шт. Отгрузка со склада в Москве 7 недель.
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от 25 шт. — 56 руб.
от 100 шт. — 32.60 руб.

Описание

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FQP13N06L N-channel MOSFET Transistor, 13.6 A, 60 V, 3-pin TO-220AB

Технические параметры

Typical Turn-Off Delay Time
20 ns
Typical Input Capacitance @ Vds
270 pF@ 25 V
Minimum Gate Threshold Voltage
1V
Typical Turn-On Delay Time
8 ns
ширина
4.7mm
Number of Elements per Chip
1
Максимальная рассеиваемая мощность
45 W
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
4.8 nC@ 5 V
тип монтажа
Through Hole
Minimum Operating Temperature
-55 °C
Pin Count
3
Channel Mode
Enhancement
Channel Type
N
конфигурация
Single
Maximum Continuous Drain Current
13.6 A
размеры
10.1 x 4.7 x 9.4mm
тип упаковки
TO-220AB
высота
9.4mm
максимальная рабочая температура
+175 °C
разрешение
Power MOSFET
Maximum Drain Source Resistance
0.11 Ω
длина
10.1mm
Maximum Drain Source Voltage
60 V

Дополнительная информация

Trans MOSFET N-CH 60V 13.6A 3-Pin TO-220