FQP17N40, MOSFET N-Channel 400V 16A

PartNumber: FQP17N40
Ном. номер: 8081979176
Производитель: Fairchild Semiconductor
FQP17N40, MOSFET N-Channel 400V 16A
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от 25 шт. — 140 руб.

Описание

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FQP17N40 N-channel MOSFET Transistor, 16 A, 400 V, 3-pin TO-220AB

Технические параметры

Максимальная рассеиваемая мощность
170 W
Minimum Gate Threshold Voltage
3V
Maximum Gate Source Voltage
±30 V
Typical Input Capacitance @ Vds
1800 pF@ 25 V
Typical Gate Charge @ Vgs
45 nC@ 10 V
Minimum Operating Temperature
-55 °C
тип монтажа
Through Hole
Typical Turn-Off Delay Time
90 ns
разрешение
Power MOSFET
Channel Type
N
конфигурация
Single
Typical Turn-On Delay Time
40 ns
Number of Elements per Chip
1
ширина
4.7mm
Pin Count
3
размеры
10.1 x 4.7 x 9.4mm
Channel Mode
Enhancement
высота
9.4mm
Maximum Drain Source Voltage
400 V
тип упаковки
TO-220AB
длина
10.1mm
Maximum Drain Source Resistance
0.27 Ω
Maximum Continuous Drain Current
16 A
максимальная рабочая температура
+150 °C

Дополнительная информация

Trans MOSFET N-CH 400V 16A 3-Pin TO-220