FQP20N06, MOSFET N-Channel 60V 20A

PartNumber: FQP20N06
Ном. номер: 8094466355
Производитель: Fairchild Semiconductor
FQP20N06, MOSFET N-Channel 60V 20A
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Описание

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FQP20N06 N-channel MOSFET Transistor, 20 A, 60 V, 3-pin TO-220AB

Технические параметры

Maximum Continuous Drain Current
20 A
высота
9.4mm
максимальная рабочая температура
+175 °C
размеры
10.1 x 4.7 x 9.4mm
Maximum Drain Source Resistance
0.06 Ω
тип упаковки
TO-220AB
длина
10.1mm
Maximum Drain Source Voltage
60 V
Typical Turn-Off Delay Time
20 ns
Максимальная рассеиваемая мощность
53 W
Maximum Gate Source Voltage
±25 V
Minimum Gate Threshold Voltage
2V
Typical Input Capacitance @ Vds
450 pF@ 25 V
Pin Count
3
разрешение
Power MOSFET
Typical Gate Charge @ Vgs
11.5 nC@ 10 V
Minimum Operating Temperature
-55 °C
тип монтажа
Through Hole
Number of Elements per Chip
1
Typical Turn-On Delay Time
5 ns
ширина
4.7mm
конфигурация
Single
Channel Type
N
Channel Mode
Enhancement

Дополнительная информация

Trans MOSFET N-CH 60V 20A 3-Pin TO-220