FQP30N06, MOSFET N-Channel 60V 30A

PartNumber: FQP30N06
Ном. номер: 8020067515
Производитель: Fairchild Semiconductor
FQP30N06, MOSFET N-Channel 60V 30A
Доступно на заказ более 30 шт. Отгрузка со склада в Москве 6 недель.
140 × = 700
Количество товаров должно быть кратно 5 шт.
от 25 шт. — 76 руб.
от 100 шт. — 52.10 руб.

Описание

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FQP30N06 N-channel MOSFET Transistor, 30 A, 60 V, 3-pin TO-220AB

Технические параметры

высота
9.4mm
Maximum Drain Source Resistance
0.04 Ω
Pin Count
3
размеры
10.1 x 4.7 x 9.4mm
тип упаковки
TO-220AB
Typical Gate Charge @ Vgs
19 nC@ 10 V
ширина
4.7mm
Typical Turn-On Delay Time
10 ns
Typical Input Capacitance @ Vds
725 pF@ 25 V
длина
10.1mm
Maximum Drain Source Voltage
60 V
Minimum Operating Temperature
-55 °C
тип монтажа
Through Hole
Number of Elements per Chip
1
разрешение
Power MOSFET
Maximum Continuous Drain Current
30 A
максимальная рабочая температура
+175 °C
конфигурация
Single
Channel Type
N
Channel Mode
Enhancement
Максимальная рассеиваемая мощность
79 W
Typical Turn-Off Delay Time
35 ns
Minimum Gate Threshold Voltage
2V
Maximum Gate Source Voltage
±25 V

Дополнительная информация

Datasheet