FQP55N10, MOSFET N-Channel 100V 55A

PartNumber: FQP55N10
Ном. номер: 8033395535
Производитель: Fairchild Semiconductor
FQP55N10, MOSFET N-Channel 100V 55A
Доступно на заказ более 30 шт. Отгрузка со склада в Москве 7 недель.
160 × = 800
Количество товаров должно быть кратно 5 шт.

Описание

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FQP55N10 N-channel MOSFET Transistor, 55 A, 100 V, 3-pin TO-220AB

Технические параметры

разрешение
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
конфигурация
Single
Dimensions
10.1 x 4.7 x 9.4mm
Maximum Continuous Drain Current
55 A
Maximum Drain Source Resistance
0.026 Ω
Maximum Drain Source Voltage
100 V
Maximum Gate Source Voltage
±25 V
Maximum Operating Temperature
+175 °C
Максимальная рассеиваемая мощность
155 W
Minimum Operating Temperature
-55 °C
Number of Elements per Chip
1
Package Type
TO-220AB
Pin Count
3
Typical Gate Charge @ Vgs
75 nC@ 10 V
Typical Input Capacitance @ Vds
2100 pF@ 25 V
Typical Turn-Off Delay Time
110 ns
Typical Turn-On Delay Time
25 ns
Width
4.7mm
Minimum Gate Threshold Voltage
2V
высота
9.4mm
длина
10.1mm
Mounting Type
Through Hole

Дополнительная информация

Trans MOSFET N-CH 100V 55A 3-Pin TO-220