FQPF13N06L, MOSFET N-Channel 60V 10A

PartNumber: FQPF13N06L
Ном. номер: 8006237013
Производитель: Fairchild Semiconductor
FQPF13N06L, MOSFET N-Channel 60V 10A
Доступно на заказ более 40 шт. Отгрузка со склада в Москве 6 недель.
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от 25 шт. — 60 руб.
от 100 шт. — 34.60 руб.

Описание

QFET® N-Channel MOSFET, 6A to 10A, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FQPF13N06L N-channel MOSFET Transistor, 10 A, 60 V, 3-pin TO-220F

Технические параметры

Maximum Gate Source Voltage
±20 V
тип монтажа
Through Hole
Typical Gate Charge @ Vgs
4.8 nC@ 5 V
Minimum Operating Temperature
-55 °C
Number of Elements per Chip
1
разрешение
Power MOSFET
Maximum Continuous Drain Current
10 A
тип упаковки
TO-220F
Pin Count
3
Максимальная рассеиваемая мощность
24 W
размеры
10.16 x 4.7 x 9.19mm
ширина
4.7mm
Typical Turn-On Delay Time
8 ns
Minimum Gate Threshold Voltage
1V
длина
10.16mm
Maximum Drain Source Voltage
60 V
Typical Input Capacitance @ Vds
270 pF@ 25 V
Channel Type
N
Channel Mode
Enhancement
Typical Turn-Off Delay Time
20 ns
конфигурация
Single
Maximum Drain Source Resistance
0.11 Ω
высота
9.19mm
максимальная рабочая температура
+175 °C

Дополнительная информация

Trans MOSFET N-CH 60V 10A 3-Pin TO-220F