FQPF15P12, MOSFET, Fairchild, FQPF15

PartNumber: FQPF15P12
Ном. номер: 8019217713
Производитель: Fairchild Semiconductor
FQPF15P12, MOSFET, Fairchild, FQPF15
Доступно на заказ 40 шт. Отгрузка со склада в Москве 7 недель.
86 × = 860
Количество товаров должно быть кратно 10 шт.

Описание

QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FQPF15P12 P-channel MOSFET Transistor, 10.6 A, -120 V, 3-pin TO-220F

Технические параметры

размеры
10.36 x 4.9 x 16.07mm
Maximum Drain Source Voltage
-120 V
тип упаковки
TO-220F
Minimum Gate Threshold Voltage
2V
тип монтажа
Through Hole
Number of Elements per Chip
1
разрешение
Power MOSFET
Maximum Gate Source Voltage
±30 V
Typical Input Capacitance @ Vds
850 pF@ -25 V
Minimum Operating Temperature
-55 °C
Channel Type
P
максимальная рабочая температура
+175 °C
Pin Count
3
Typical Gate Charge @ Vgs
29 nC@ -10 V
Максимальная рассеиваемая мощность
41 W
Maximum Continuous Drain Current
10.6 A
Typical Turn-Off Delay Time
80 ns
длина
10.36mm
высота
16.07mm
Typical Turn-On Delay Time
15 ns
ширина
4.9mm
конфигурация
Single
Channel Mode
Enhancement
Maximum Drain Source Resistance
0.2 Ω

Дополнительная информация

FQPF15P12, P-Channel QFET MOSFET -120V -15A ...