FQPF47P06, MOSFET P-Channel 60V 30A

PartNumber: FQPF47P06
Ном. номер: 8067997485
Производитель: Fairchild Semiconductor
FQPF47P06, MOSFET P-Channel 60V 30A
Доступно на заказ более 10 шт. Отгрузка со склада в Москве 6 недель.
320 × = 320
от 25 шт. — 150 руб.

Описание

QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FQPF47P06 P-channel MOSFET Transistor, 30 A, 60 V, 3-pin TO-220F

Технические параметры

тип монтажа
Through Hole
Channel Type
P
Pin Count
3
Channel Mode
Enhancement
конфигурация
Single
Typical Turn-On Delay Time
50 ns
Number of Elements per Chip
1
разрешение
Power MOSFET
Typical Input Capacitance @ Vds
2800 pF@ 25 V
Typical Gate Charge @ Vgs
84 nC@ 10 V
Minimum Operating Temperature
-55 °C
ширина
4.7mm
размеры
10.16 x 4.7 x 9.19mm
высота
9.19mm
Maximum Drain Source Resistance
0.026 Ω
максимальная рабочая температура
+175 °C
длина
10.16mm
тип упаковки
TO-220F
Typical Turn-Off Delay Time
100 ns
Minimum Gate Threshold Voltage
2V
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Максимальная рассеиваемая мощность
62 W
Maximum Gate Source Voltage
±25 V

Дополнительная информация

Datasheet